| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of reducing a variation in on-resistance and of reducing a manufacturing cost. SOLUTION: In a lateral trench MOSFET, an n offset drain region 9 is formed continuously from side walls of a trench 102, and a bottom of the same formed on the surface of a semiconductor substrate 100 and the trench 102 is filled therein with an oxide film 104. The manufacturing method of the trench MOSFET comprises an etching process of forming a plurality of the first trenches 102 with a reverse tapered shape cross section by etching the semiconductor substrate 100 with a striped mask pattern; and an ion implantation process of forming the n offset drain region 9 by implementing inclined ion implantation and vertical ion implantation from the side surfaces of the first trench 102, and from the bottom of the same. It is therefore possible to form the n offset drain region 9 with a reduced variation in concentration without depending on a variation in a taper angle of the first trench 102 for reduction of a manufacturing cost. COPYRIGHT: (C)2006,JPO&NCIPI
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