| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a dielectric element which is superior in the resonance frequency and the like, and moreover, which can be miniaturized. SOLUTION: The device is provided with a semiconductor substrate 1, a first insulating resin layer 11, a first wiring layer 12, a second insulating resin layer 13, and a second wiring layer 14 connected to the first wiring layer 12. The second wiring layer 14 has the dielectric element 15. A convex part 18 is formed on the second insulating resin layer 13. In the second wiring layer 14, one part is formed on the second insulting resin layer 13, and the other part is formed on the convex part 18 between one part and the other part in an adjacent position relation. COPYRIGHT: (C)2006,JPO&NCIPI
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