| 摘要 |
A method for forming a contact is provided to easily control the polishing quantity of an interlayer dielectric by forming a multilayered structure as an interlayer dielectric wherein the multilayered structure includes first and second interlayer dielectrics with etch selectivity. A first interlayer dielectric(106) is formed on a substrate(100). A second interlayer dielectric is formed on the first interlayer dielectric, made of a material having etch selectivity with respect to a material constituting the first interlayer dielectric. The second and first interlayer dielectrics are patterned to form a contact hole partially exposing the substrate. The contact hole is filled with a conductive pattern. The second interlayer dielectric is removed to make the upper portion of the conductive pattern protrude from the first interlayer dielectric. The protruding conductive pattern is removed to form a contact(116). The process for forming the conductive pattern can include the following steps. A conductive layer is formed on the second interlayer dielectric to completely bury the contact hole. The conductive layer is planarized to expose the upper surface of the second interlayer dielectric.
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