METHOD OF MANUFACTURING A NON-VOLATILE MEMORY DEVICE

摘要

A method for fabricating an NVM(non-volatile memory) device is provided to transform a silicon-hydrogen bonding existing in a dielectric layer into a silicon-fluorine bonding with relatively strong bonding force and reduce a trap density in the dielectric layer by performing a fluoridation treatment using fluorine gas. A tunnel oxide layer(110), a floating gate layer(112) and a preliminary dielectric layer(114) are sequentially formed on a semiconductor substrate(100). The preliminary dielectric layer is fluoridated to form a dielectric layer by a plasma process performed in an atmosphere of fluorine-including gas. A control gate layer is formed on the dielectric layer. A first oxide layer(114a), a nitride layer(114b) and a second oxide layer(114c) can be sequentially stacked in the preliminary dielectric layer.