发明名称 Semiconductor device having wires that vary in wiring pitch
摘要 A semiconductor device includes a first wiring layer having a first wiring pitch and a second wiring layer having a second wiring pitch that differs from the first wiring pitch. The device further includes a third wiring layer which connects the first wiring layer and the second wiring layer and has a wiring incident angle of less than 45 degrees to at least the first wiring layer.
申请公布号 US7402904(B2) 申请公布日期 2008.07.22
申请号 US20050085584 申请日期 2005.03.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MINAMI TOSHIFUMI;OONUKI SATOSHI
分类号 H01L23/04 主分类号 H01L23/04
代理机构 代理人
主权项
地址