| 发明名称 |
Method of forming through-silicon vias with stress buffer collars and resulting devices |
| 摘要 |
A method of forming a via having a stress buffer collar, wherein the stress buffer collar can absorb stress resulting from a mismatch in the coefficients of thermal expansion of the surrounding materials. Other embodiments are described and claimed.
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| 申请公布号 |
US7402515(B2) |
申请公布日期 |
2008.07.22 |
| 申请号 |
US20050169595 |
申请日期 |
2005.06.28 |
| 申请人 |
INTEL CORPORATION |
发明人 |
ARANA LEONEL R.;NATEKAR DEVENDRA;NEWMAN MICHAEL;GURUMURTHY CHARAN K. |
| 分类号 |
H01L21/4763;H01L21/44 |
主分类号 |
H01L21/4763 |
| 代理机构 |
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