<p>A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes over the single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.</p>
申请公布号
WO2008109204(A2)
申请公布日期
2008.09.12
申请号
WO2008US52281
申请日期
2008.01.29
申请人
YU, ZHEN;BURKE, PETER J.;MCKERNAN, STEFFEN;WANG, DAWEI
发明人
YU, ZHEN;BURKE, PETER J.;MCKERNAN, STEFFEN;WANG, DAWEI