| 摘要 |
A method for forming a dual gate of a semiconductor device is provided to improve reliability of the semiconductor device by preventing the deterioration of the gate oxidation layer due to impurity diffusion or penetration inside the gate conductive layer. A gate oxidation layer(130) is formed on a semiconductor substrate. The gate oxidation layer is nitrified by the in-situ process. A polysilicon layer(140) doped with the impurity is formed on the nitrified gate oxidation layer. A gate stack is formed by patterning the polysilicon layer and the gate oxidation layer. The semiconductor substrate includes a first region and a second region. An N type polysilicon layer doped with the impurity is formed on the gate oxidation layer in the first region. A P type polysilicon layer doped with the impurity is formed on the gate oxidation layer in the second region. A dual gate electrode is formed by patterning a hard mask film(160), a metal silicide layer(150), a gate conductive film, a second gate oxide and a first gate oxidation film. The first region is formed into the NMOS region. The second region is formed into the PMOS region.
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