| 摘要 |
The semiconductor light emitting device and manufacturing method thereof are provided to pass the light generated in the active layer without the absorption of the separation section of the semiconductor layer. The semiconductor light emitting device(100) comprises the substrate(110), the buffer layer(120), the n-type semiconductor layer(130), the active layer(140), the p-type semiconductor layer(150), the transparent electrode layer(160), the p-type electrode(170) and the n-type electrode(180). The scribing groove(112) is formed in the side of substrate after the singulation is progressed. The scribing groove divides the substrate and the semiconductor layer. The scribing groove is formed by the mechanical cutting process or the etching process. The scribing groove is formed of the depth of about 20 mum or 40 mum to be cut by the physical power.
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