SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor light emitting device and a manufacturing method thereof are provided to increase the radiation recombination probability of the electrons and holes within the active layer by providing the electron barrier layer to the active layer. A buffer layer or undoped semiconductor layer(120) is formed on a substrate(110). A first conductive semiconductor layer(130) is formed on the undoped semiconductor layer. A first conductivity clad layer(140) is formed on the first conductive semiconductor layer. An active layer(150) is formed on the first conductivity clad layer. A lower part active layer(151) having a quantum barrier layer(153) and one or more quantum-well layer(157) is formed within the active layer. An electron barrier layer(155) is formed between a quantum-well layer(152) and a top active layer(156) having quantum barrier layers(158).