发明名称 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING DISPLAY DEVICE HAVING THIN FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a highly reliable thin film transistor exhibiting excellent electric characteristics, and to provide a method of manufacturing a display device having the thin film transistor. SOLUTION: Crystallinity on the interface of a gate insulating film and a microcrystalline semiconductor film is enhanced by forming the gate insulating film on a gate electrode, forming crystalline nuclei on the gate insulating film by using silane fluoride and silane, and forming the microcrystalline semiconductor film by crystal growth using the crystalline nuclei as seeds. Thereafter, a thin film transistor is formed by using the microcrystalline semiconductor film having crystallinity enhanced on the interface to the gate insulating film as a channel formation region. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009088501(A) 申请公布日期 2009.04.23
申请号 JP20080233651 申请日期 2008.09.11
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;JINBO YASUHIRO;FURUNO MAKOTO
分类号 H01L21/336;G09F9/00;G09F9/30;H01L21/205;H01L29/786 主分类号 H01L21/336
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