| 发明名称 |
JUNCTION STRUCTURE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction structure capable of being excellently joined under a low temperature environment.SOLUTION: A junction structure (100) includes: a semiconductor element (110); a metal film (120); and a wiring (130). The metal film (120) joined the semiconductor element (110) and the wiring (130). A metal constituting the metal film (120) is diffused by stress migration.SELECTED DRAWING: Figure 1 |
| 申请公布号 |
JP2016111259(A) |
申请公布日期 |
2016.06.20 |
| 申请号 |
JP20140248918 |
申请日期 |
2014.12.09 |
| 申请人 |
OSAKA UNIV |
发明人 |
SUGANUMA KATSUAKI;NAGAO SHIJO;OH CHULMIN |
| 分类号 |
H01L21/60;B23K20/00;H05K1/09 |
主分类号 |
H01L21/60 |
| 代理机构 |
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