发明名称 TRANSITION METAL PNICTIDE COMPOUND AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide an itinerant electron antiferromagnetic compound having transition temperature of room temperature or more, antiferromagnetic property and metal conductivity and capable of controlling the transition temperature by partial substitution of constitutional elements, and a manufacturing method therefor.SOLUTION: There is provided an itinerant electron antiferromagnetic compound which is a transition metal pnictide compound represented by the chemical formula RETMPnN, where RE is at least one kind of rare earth element selected from Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, Tm is at least one kind of transition metal element selected from Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd, Ag, Os, Ir and Pt, Pn is at least one kind of pnictide element selected from P, As, Sb and Bi and N is nitrogen, and consists of a crystal belonging to area groups of rhombic system Cmcm obtained by blending raw material with a ratio, by atom ratio, of RE:TM:Pn:N=1:2:1:1 and heat sintering at 800 to 1500°C under high pressure of 1 to 10 GPa.SELECTED DRAWING: Figure 1
申请公布号 JP2016150861(A) 申请公布日期 2016.08.22
申请号 JP20150027978 申请日期 2015.02.16
申请人 TOKYO INSTITUTE OF TECHNOLOGY 发明人 HOSONO HIDEO;MATSUISHI SATOSHI;KUMOMI HIDEYA
分类号 C01B21/00;H01B12/00;H01F1/14 主分类号 C01B21/00
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