THIN FILM TRANSISTOR SUBSTRATE

摘要

A TFT(Thin Film Transistor) substrate is provided to arrange a source electrode such that the source electrode covers the overall width of a gate line to make a parasitic capacitance uniform and allocate first and second data lines and first and second drain electrodes for a single pixel to maintain the pixel even though one of the data lines and the drain electrodes is cut. A TFT substrate includes an insulating substrate, a gate line(22), an active layer(40), first and second data lines(52a,52b), first and second drain electrodes(55a,55b) and a source electrode(56). The gate line is formed on the insulating substrate and includes a gate electrode(26). The active layer is superposed on the gate electrode. The first and second data lines are insulated from the gate line and intersect the gate line. The first and second drain electrodes are respectively branched off from the first and second data lines and superposed on the active layer. The source electrode is disposed between the first and second drain electrodes and formed on the gate electrode. The width of the source electrode is greater than the width of the gate electrode.