| 摘要 |
<p>A semiconductor device and a manufacturing method therefor are provided, the semiconductor device having a good reverse recovery characteristic, and having no reduction in breakdown voltage because no defect occurs in the upper main surface of a Si substrate even when wires are bonded onto an anode electrode. A semiconductor device comprises a Si substrate including an N<+> cathode layer (101) and an N<-> layer (102). An impurity such as platinum whose barrier height is less than that of silicon is introduced into upper regions of the N<-> layer (102) where P anode layers (103) are not formed, thereby forming Schottky junction regions (104). A barrier metal (105) is formed between the Si substrate and an anode electrode (106).</p> |
