| 摘要 |
In preparation of Ga cpd. with low Si content in closed quartz glass reaction tube, at least one substance from Si (cpd.), B (cpd.) and Al (cpd.) group is added to vessel containing Ga melt and, at same time, at least one of O2, CO2 and metal oxides which are unstable at temp. of vessel and can produce Ga2O vapour, is added to quartz glass tube, so that crystal of Ga cpd. with stable oxide coating grows on surface of melt of Ga cpd. Cpds. which can be produced included many semi-conductive cpds., e.g. GaAs, GaP, Ga1-xInxAs, Ga1-xAlxAs, GaAs1-xPx and Ga1-xInxP (in which x is 0-1). |
