| 摘要 |
1,244,903. Ohmic contacts for semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 14 April, 1969 [7 May, 1968], No. 18992/69. Heading H1K. [Also-in Division C7] Contacts such as Mo or W are formed on substrates such as semi-conductors of Si by vapour depositing the metal at a temperature and time insufficient to allow alloying between the metal and substrate, cooling the substrate to a lower temperature and continuing the deposition at this temperature. The deposition may be vacuum evaporation, sputtering or hydrogen reduction of gaseous MoCl 5 . In a specific example Mo was deposited on to a platinum silicide or palladium silicide contact on a Si wafer by hydrogen reduction of MoCl 5 at 575-625‹ C. for the first stage and at 475- 550‹ C. for the second stage. The Mo is also at the same time deposited on the surrounding insulators e.g. SiO 2 , Si 3 N 4 . |
