| 摘要 |
1309228 Semi-conductor devices SIEMENS AG 7 May 1971 [8 May 1970] 13665/71 Heading H1K A pn-junction terminating beneath a masking layer 5 on a surface of a p(n)-type semi-conductor layer 3 on an n(p)-type substrate 1 is formed by diffusing n(p)-type regions 17, 19 into the walls of trenches 7, 9 extending at least most of the way through the layer 3, and the substrate 1 is divided into individual devices along the lines of the trenches. As shown the trenches 7, 9, which are preferably etched, may extend a short way into the substrate 1. A transistor is provided by diffusing an emitter region 13 simultaneously with the regions 17, 19, which form parts of the collector region constituted in the main, by the substrate 1. A part of the epitaxial layer 3 thus provides the base region. For a Si device layers 24, 25, 29 of SiO 2 and layer 23 of glass form in the trenches and over the emitter opening during diffusion. Openings for contacts are formed therein and in the oxide masking layer 5, and further openings are etched in the bottoms of the trenches to permit individual devices to be separated mechanically or by etching on planes 35. |
