发明名称 |
Isolating phase change memory devices |
摘要 |
A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments.
|
申请公布号 |
US7271403(B2) |
申请公布日期 |
2007.09.18 |
申请号 |
US20020319183 |
申请日期 |
2002.12.13 |
申请人 |
INTEL CORPORATION |
发明人 |
KARPOV ILYA;PARKINSON WARD;LEE SEAN |
分类号 |
H01L47/00;H01L27/24 |
主分类号 |
H01L47/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|