| 摘要 |
<p>A semi-conductor detector element partic. applicable to gamma ray detection is formed from a HgI2 base element, typically 10 mm2 x 0.5 mm thick with diffused layers of Au, Ag or Pt on each flat side and amalgam interfaces between the base element and the layers. The bottom layer is adhesive attached to a cooling block with an electrode connection. A second electrode is attached to the top layer. Incident radiation causes base element anions or cations to be attracted to the outer layers and peripheral zone characteristics are altered to inhibit counter current field formation enabling a cascade effect to build up between time intervals of 3.1 to 3.5 x 10-4 Asecs to produce pulse peaks of 2 to 3000 counts per sec.</p> |
