发明名称 METHOD OF ETCHING
摘要 The invention relates to a method for reducing the comsumption of etchants used in manufacturing semiconductor devices comprising the steps of supporting a semiconductor wafer, metering a predetermined volume of etchant onto the surface of said wafer to form a meniscus-contained body of etchant thereon, maintaining said wafer static during etching, sensing the completion of said etching, and spinning said wafer upon completion of the etching to remove the etchant from the wafer and terminate the etching operation.
申请公布号 JPS51132972(A) 申请公布日期 1976.11.18
申请号 JP19760038335 申请日期 1976.04.07
申请人 IBM 发明人 RODERITSUKU KEI FUUDO
分类号 H01L21/30;G03D5/04;G03F7/30;H01L21/00;H01L21/027;H01L21/306;H01L21/68;H01L23/29 主分类号 H01L21/30
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