METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT PROTECTED AGAINST EXCESS VOLTAGES

摘要

1457909 Semiconductor devices LICENTIA PATENT VERWALTUNGS GmbH 1 March 1974 [2 March 1973] 9398/74 Heading H1K A method of protecting a PN junction or a Schottky barrier against excessive reverse bias, comprises increasing the doping in limited regions 6 of the junction or barrier so that the breakdown voltage in these regions 6 is lower than in the remaining regions. An nsilicon substrate 2 and a gallium doped p+ region 3 form a PN junction, the region 6 of which is doped further by diffusion of sulphur through an oxide mask so that the dopant concentration in it is 1À3 to 2 times that of the surrounding region. The diffusion is performed in a quartz ampoule containing argon at 1000‹ C. for 6 to 30 hours. In an alternative embodiment, the highly doped region 6 covers most of the PN junction, Fig. 7, (not shown) and the device has chamfered edges. Instead of sulphur a group VIB element other than oxygen may be used as the dopant. The method may be applied in the production of diodes, thyristors or transistors.