发明名称 |
Reduction of reverse short channel effects by implantation of neutral dopants |
摘要 |
A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.
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申请公布号 |
US2002063294(A1) |
申请公布日期 |
2002.05.30 |
申请号 |
US20010054297 |
申请日期 |
2001.11.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES |
发明人 |
BROWN JEFFREY SCOTT;FURKAY STEPHEN SCOTT;GAUTHIER ROBERT J.;MARTIN DALE WARNER;SLINKMAN JAMES ALBERT |
分类号 |
H01L29/78;H01L21/265;H01L21/335;H01L21/336;H01L29/10;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L21/425 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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