INTERCONNECT FOR TESTING SEMICONDUCTOR DICE HAVING RAISED BOND PADS

摘要

A method for testing unpackaged semiconductor dice having raised contact locations (e.g., bumped bond pads) and a method for forming an interconnect suitable for testing this type of dice are provided. The interconnect includes a substrate having contact members comprising an array of sharpened elongated projections. The sharpened projections are formed by etching (or by growing and removing an oxide) through exposed areas of a mask. A conductive layer is formed on the sharpened projections and is in electrical communication with conductive traces formed on the substrate. The conductive layer can be formed as a layer of metal, as a stack of metals including a barrier metal, as a silicide, or as a layer of polysilicon. For testing an unpackaged die, the interconnect and die are placed in a temporary carrier and biased together. The sharpened projections are adapted to penetrate the contact location on the die to a limited penetration depth to establish an ohmic connection while minimizing damage to the contact location.