| 摘要 |
PURPOSE:To form a quantum well semiconductor laser with good characteristics without needing a high-temperature process to affect bad effect the light-emitting region after the growth of the light-emitting region, and at the same time, obtaining good current constriction by a method wherein buried layers holding the light-emitting region between them are provided on the semiconductor substrate through an insulating film using a polycrystalline semiconductor. CONSTITUTION:An insulating film 11 of a thickness of about 0.1mum or less is provided on an N type GaAs substrate 1 having a carrier concentration of 2X10<18>cm<-3> or thereabouts, for example, using aluminum nitride (AlN), for example, and an aperture in an extent, wherein the striped semiconductor layer including the light-emitting region can be made to epitaxially grow, is provided. For example, semiconductor layers 2-6 are made to epitaxially grow in order on the GaAs substrate 1 exposing in the aperture by a metal organic chemical vapor deposition method (MOCVD method), and at the same time, polycrystalline buried layers 7 holding the epitaxial growth layers 2-6 between them are made to grow on the insulating film 11 by an MOCVD method. An electrode 12 on the P side and an electrode 13 on the N side are formed by the conventional technique and this semiconductor luminescent device is completed via processes of cleavage and so forth. |
