| 摘要 |
PURPOSE:To prepare an n type zinc sulfide selenide crystal having good quality and low resistance by heat-treatin a substrate deposited with zinc sulfide selenide by the vapor growth method from an organometallic compd. contg. a Group IIIelement in the atmosphere contg. the Group III element. CONSTITUTION:A carbon susceptor 5 coated with SiC is provided to the inside of a quartz reaction tube 1, and a semiconductor crystal substrate 6 is held thereon and heated with a heating device 7. Gaseous starting materials comprising an organometallic compd. and a hydride is fed respectively to a reaction tube 1 provided with a gas discharging port 4 from a feeding port 2, 3, and epitaxial growth under reduced pressure is executed. In this device a ZnS cytstal incorporated with Al is grown epitaxially by the MOCVD on a GaP crystal substrate using dimethyl zinc, H2S and triethyl Al as donor impurity. The heat- treatment is executed successively without taking out the ZnS crystal growth substrate from the reaction tube at ca. 600 deg.C for ca. 5hr in Zn-Al atmosphere while introducing successively dimethyl zinc and triethyl Al omitting H2S alone. |
