| 摘要 |
PROBLEM TO BE SOLVED: To improve operation efficiency of a plasma enhanced CVD system by suppressing deposition of a film on other surface than chat of a substrate. SOLUTION: The plasma enhanced CVD system comprises a plasma generation chamber 101 and a treatment chamber 102 both of which are separated from each other, a reaction gas injection nozzle 21 with a plasma injection nozzle 13 which feeds the plasma 19 generated in the plasma generation chamber 101. The reaction gas 24 and the plasma 19 are fed into the treatment chamber 102, and also a deposite preventing gas 25 are fed through a let 22, which prevents deposition on the plasma injection nozzle 13 provided outer- circumferentially. A plasma generating gas 26 is fed into the plasma generation chamber 101 to generate the plasma 19, and to feed to the treatment chamber 102 through the nozzle 13. The reaction gas 24 and the deposite preventing gas 25 is fed through the gas outlet 22, and a film of is only deposited on the surface of a substrate 11 the faced to the plasma injection nozzle 13 in the treatment chamber 102. |
