| 摘要 |
PURPOSE:To prevent residual matters from being left on interfaces and and to prevent underlaying layers from being damaged thermally, by applying approximately uniform energy beam to a semiconductor film arranged to cover continuously all of a plurality of electrode films on a substrate for removing portions of the semiconductor film so as to separate the semiconductor film into a plurality of photoelectric conversion elements. CONSTITUTION:A transparent electrode film 11 of tin oxide is adhered on a substrate 10. Portions 11' of the film 11 are removed by applying laser beams thereto for separating and forming individual transparent electrode film sections 11a, 11b. these portions 11a, 11b... provide spaces between adjacent transparent electrode film sections. An amorphous semiconductor film 12 of amorphous silicon or the like is adhered over the substrate 10, and portions 12' are removed by applying laser beams for separating and forming semiconductor film sections 12a, 12b.... A back electrode film 13 of a single aluminium layer or of a bi-layer structure consisting of aluminium and titanium or the like is adhered all over the substrate 10 including the exposed portions. In the final step, portions 13a, 13b... are removed by applying laser beams. Though some low-resistance layer is left on the surface, it does not raise substantial problem if an illuminance is ordinary. Thus, the present method can prevent residual matters from being left on the removal interface and can prevent underlaying layers from being damaged thermally. |
