| 摘要 |
PURPOSE:To prevent the formation of an overgrowth part, by providing a base stage having a recess, on which a single crystal substrate is mounted, and a recess, whose one side is continued to said recess and depth is deeper than said recess, and on which a dummy single crystal substrate, is mounted between the said recess and a slider in a standby state. CONSTITUTION:A slider 2 has a plurality of melt wells 2A and freely slides on a base stage. A single crystal substrate 4, on which a multilayer semiconductor crystal layer is to be grown, is mounted on recess 1A in the base stage 1. A recess 1B is located between the recess 1A and a slider 2 in a standby stage. One side of the recess 1B is continued to the recess 1A. The recess 1B is deeper than the recess 1A. A dummy single crystal substrate 4' is mounted on the recess part 1B. Melt is contacted with the single crystal substrate 4 and the semiconductor crystal layer is grown. At this time, the concentration of the solute of the melt in the vicinity of a front edge part 4A of the single crystal substrate 4 is not different at all in comparison with that of melt of the surrounding part owing to the presence of the dummy single crystal substrate 4'. Thus the formation of the overgrowth at the front edge part of the single crystal substrate is prevented.
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