| 摘要 |
PURPOSE:To shorten the process of manufacturing, by making the structure of a bipolar element in the vicinity of an emitter similar to the structure of an N-channel MOS part in the vicinity of a gate. CONSTITUTION:A polysilicon film 202 is provided on an emitter region 15 of a bipolar type transistor. An insulator film is provided on the side part of the polysilicon film 202. A silicide film 16 is provided on a base region 11 of the bipolar transistor. A polysilicon film 201 is formed on the gate of an N- channel MOS at the same time as the polysilicon film 202. A side wall 17 of the insulating film is formed on the side part of the polysilicon film 201. The silicide films 16 are provided on the polysilicon film 201 of the gate and on the upper parts of the polysilicon film 202 of the emitter and source and drain regions 6, 7, 9 and 10. Since the N-channel MOS and the bipolar transistor have the approximately same structure, the manufacturing process can be shortened. |
