发明名称 |
Method for manufacturing poly-crystal sillicon having high resistance |
摘要 |
Method for manufacturing polycrystalline silicon having high resistance, having a first step for depositing a polycrystalline silicon layer for a resistor area over a silicon semiconductor substrate; a second step for growing a first thermal oxide layer having a first specified depth over the polycrystalline silicon layer, ion-implanting with the nitrogen thereon, and growing a second thermal oxide layer having a second specified depth on the ion-implanted layer; a third step for forming a resistor pattern of the polycrystalline silicon with a photo etching method; and a fourth step for ion-implanting impurities in order to decrease the resistance of the polycrystalline silicon as contact regions to be used in resistance contacts with a fixed semiconductor region on the substrate.
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申请公布号 |
US4965214(A) |
申请公布日期 |
1990.10.23 |
申请号 |
US19880224810 |
申请日期 |
1988.07.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, KYU H.;LEE, JUNG H.;LEE, HEYUNG-SUB;YOOK, TAE-YOON;BAE, DONG-JOO |
分类号 |
H01L27/10;H01L21/02;H01L21/822;H01L21/8244;H01L27/04;H01L27/11 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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