NONLINEAR RESISTANCE ELEMENT

摘要

PURPOSE:To decrease an electric capacity with the simple element structure for which fineness is not demanded by interposing a semiconductor layer essentially consisting of In and Se between a 1st electrode layer and a 2nd electrode layer. CONSTITUTION:The semiconductor layer 3 essentially consisting of the In and Se is interposed between the 1st electrode layer 2 and the 2nd electrode layer 6. A compd. InSe is easily formed in the semiconductor layer 3 essentially consisting of the In and Se. This compd. is dispersed in the form of fine crystal at a high density in the layer. Barriers are formed by the influence of the trap of these crystal grain boundaries, by which nonlinearity is exhibited in the voltage-current characteristics. Since the dielectric constant of this semiconductor layer 3 is <=1/20 as compared to the dielectric constant of Ta2O5, the nonlinear resistance element interposed with this semiconductor layer 3 as an intermediate layer between the 1st electrode layer 2 and the 2nd electrode layer 6 can decrease the electric capacity Cn of the element without decreasing the element area. The electric capacity is decreased in this way with the simple element structure for which the fineness is not demanded.