| 摘要 |
PURPOSE:To avoid the production of reaction produce when the connection hole between the second metallic wiring as an upper layer and the first metallic wiring as a lower layer is made by a method wherein the first conductive film is formed only on the prospective connection part to the second metallic wiring layer on the first metallic wiring layer. CONSTITUTION:The first metallic wiring layer 3 is sputter-deposited on the first interlayer insulating film 2 deposited on a semiconductor substrate 1 so as to be patterned for the formation of the first metallic wiring 3. Next, the first conductive film 11 is deposited using a low temperature plasma CVD device. Next, RIE process is performed using the data inversion mask for the formation of the connection hole between the second metallic wiring and the first metallic wiring to leave the first conductive film 11 in the prospective connection region of the second metallic wiring to the first metallic wiring. Finally, after depositing the second interlayer insulating film 4 using the low temperature plasma CVD device, RIE process is performed using the mask for the formation of the connection hole between the second metallic wiring and the first metallic wiring to make another connection hole 6 smaller than the first conductive film 11 in a plasma SiO2 film 4 so that the first metallic wiring 3 may be exposed. |
