Microelectronic devices including ferroelectric capacitors with lower electrodes extending into contact holes and related methods

摘要

A microelectronic device includes an insulating layer on a microelectronic substrate wherein the insulating layer has a contact hole therein exposing a portion of the microelectronic substrate. A first capacitor electrode is provided on a surface of the insulating layer opposite the microelectronic substrate and adjacent the contact hole wherein a lower portion of the first capacitor electrode extends into the contact hole below the surface of the insulating layer. A ferroelectric layer is provided on the first capacitor electrode, and a second capacitor electrode is provided on the ferroelectric layer. Related methods and memory devices are also discussed.