发明名称 |
Programmierbarer Kontaktfleck. |
摘要 |
A bonding pad structure and method for making the same which can be connected at the metalization step to form passive or active devices in addition to forming a bonding pad. A P-doped region (34) is formed in an epitaxial layer (28) in the area of the bonding pad (22). This P-doped region (34) allows the formation of a junction capacitance between it and the epitaxial layer (28). In addition, by adding an oxide layer (36) over the P-doped region (34) an oxide capacitor can be formed between the metal bonding pad (30) and the P-doped region (34) with the oxide as the dielectric. The P-doped region can also be used as a resistance by providing metal connections (42,44) to either end. Finally, a vertical PNP transistor can be formed between the P-doped region (34), the epitaxial layer (28) and the P-doped substrate (26). |
申请公布号 |
DE3786693(T2) |
申请公布日期 |
1994.02.10 |
申请号 |
DE19873786693T |
申请日期 |
1987.04.08 |
申请人 |
EXAR CORP., SUNNYVALE, CALIF., US |
发明人 |
GIANNELLA, GIOVANNI PICCOLO, SUNNYVALE CALIFORNIA 94087, US |
分类号 |
H01L21/82;H01L21/60;H01L21/822;H01L23/485;H01L23/525;H01L27/04;H01L27/102 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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