| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MAKING IT |
| 摘要 |
<p>A semiconductor device is made by etching, using a mask having an opening defined by edges including at least one ¢011! oriented edge, a (100) plane major surface of a III-V compound semiconductor layer so that the surface revealed by this etching step has the (111) orientation. An electrode is disposed to overpass the etched (111) surface by vacuum vapor deposition of an electrode metal.</p> |
| 申请公布号 |
CA2057123(C) |
申请公布日期 |
1995.12.19 |
| 申请号 |
CA19912057123 |
申请日期 |
1991.12.05 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIRONAKA, MISAO |
| 分类号 |
H01L21/60;H01L21/28;H01L23/482;H01L29/04;(IPC1-7):H01L21/308;H01L21/18 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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