| 摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture transfer masks having peripheral sidewall in high precision in a short time by forming the trenches for separating the transfer masks from a substrate backside to respective transfer masks by wet etching step only. SOLUTION: The trenches 16 for separating the transfer masks 17 are formed by wet etching step so as to separate respective transfer masks 17 by wet etching step until the trenches 16 reach a substrate surface side from the substrate backside. Silicon substrate, clad silicon substrate or multilayer silicon substrate are applicable for the substrate while the preferable etching oblique angle of the supporting frame and the trenches 16 is within the range of 54-56 deg.. The trenches 6 are to be formed so that the trenches in the longitudinal and lateral direction for the separation to be separated on the substrate backside may be formed respectively to be parallel with or vertical to the crystalline axis on the silicon substrate backside.</p> |
