| 摘要 |
PROBLEM TO BE SOLVED: To form a flattened semiconductor barrier layer and a quantum well layer by forming a layer where the step punching is reduced, by decreasing the ratio of the group V raw material supply amount/group III raw material supply amount (V/III ratio) during the growth of III-V group semiconductor. SOLUTION: Firstly, a semiconductor substrate 1 having growth plane azimuth (11n) B puts simultaneously GaAs substrate (N=3 to 7) to MOVPE reactor, and a clad layer 2 lattice-matching to the GaAs is grown, thereafter, barrier layer, a multiple quantum well layer 3 of quantum well layer, and a second clad layer as a cap layer 4 are sequentrally grown. And the growing temperature at that time is set to 660 deg.C, and the ratio of group V raw material supply amount/group III raw material supply amount (V/III ratio) is set to 55. By doing this, the height of step pinching at the quantum well layer of the growth layer is reduced. As a result, flattening of the quantum well construction can be improved, and emission efficiency from the quantum well layer can be improved. |
