发明名称 |
Method of chemically-mechanically polishing an electronic component |
摘要 |
A method of chemically polishing aluminum from a semiconductor wafer to leave a wiring pattern thereon. The surface of the aluminum in aqueous environment consists of hydrated alumina; upon contact with the hydrated silica particles of a polishing slurry at neutral pH, the surface alumina is transferred to the surface of the silica by aluminosilicate formation removing the alumina layer by layer by contact chemical reaction. Wafers thus polished have nearly scratch-free and corrosion-free polished aluminum lines in an insulator surface./!
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申请公布号 |
US5752875(A) |
申请公布日期 |
1998.05.19 |
申请号 |
US19970890457 |
申请日期 |
1997.07.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RONAY, MARIA |
分类号 |
H01L21/304;B24B37/00;H01L21/321;(IPC1-7):B24B1/00 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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