发明名称 Interconnect with pressure sensing mechanism for testing semiconductor wafers
摘要 An interconnect for testing semiconductor wafers, and a method and system for testing wafers using the interconnect are provided. The interconnect includes a substrate with contact members configured to establish temporary electrical communication with contact locations (e.g., bond pads, test pads) on the wafer. For flat contact locations (e.g., thin film bond pads), the contact members comprise raised members with penetrating projections. For bumped contact locations (e.g., solder bumps), the contact members comprise indentations with a conductive layer. The interconnect also includes a pressure sensing mechanism for monitoring and controlling contact forces between the interconnect and wafer. In an illustrative embodiment the pressure sensing mechanism comprises a piezoresistive or piezoelectric layer and resistance measuring device.
申请公布号 US5894161(A) 申请公布日期 1999.04.13
申请号 US19970805126 申请日期 1997.02.24
申请人 MICRON TECHNOLOGY, INC. 发明人 AKRAM, SALMAN;FARNWORTH, WARREN M.
分类号 G01R1/04;G01R1/067;G01R1/073;G01R31/28;(IPC1-7):H01L23/58;H01L29/82 主分类号 G01R1/04
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