发明名称 |
Semiconductor device having first and second insulating layers |
摘要 |
A semiconductor device advantageously has first and second oxidized silicon insulating layers formed on the surface of a substrate. A first oxidized silicon insulating layer is formed through a low temperature process and a second oxidized silicon insulating layer may be formed at a higher manufacturing process temperature. Advantageously, the first oxidized silicon insulating layer has a lower voltage resistance than the second oxidized silicon insulating layer.
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申请公布号 |
US5894159(A) |
申请公布日期 |
1999.04.13 |
申请号 |
US19970854515 |
申请日期 |
1997.05.12 |
申请人 |
SONY CORPORATION |
发明人 |
MORI, HIROSHI;SAMESHIMA, TOSHIYUKI |
分类号 |
H01L29/78;H01L21/28;H01L21/314;H01L21/316;H01L21/336;H01L29/49;H01L29/51;H01L29/786;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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