发明名称 |
Semiconductor device having high breakdown voltage and method of manufacturing the same |
摘要 |
In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n31 silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.
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申请公布号 |
US5894149(A) |
申请公布日期 |
1999.04.13 |
申请号 |
US19960762175 |
申请日期 |
1996.12.09 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
UENISHI, AKIO;NAKAMURA, KATSUMI |
分类号 |
H01L21/331;H01L29/06;H01L29/40;H01L29/739;H01L29/78;(IPC1-7):H01L29/78;H01L29/745 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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