| 摘要 |
<p>PROBLEM TO BE SOLVED: To enhance the radiation performance of FET with suppressing the manufacturing cost from increasing. SOLUTION: This device comprises a mount 15 with a pellet 11 connected through an Au foil 18, a stem 20 connected the mount through a solder zone 32, a spacer 24 fixed to the outside of the mount 15 of the stem 20 through the solder zone 32, a gate lead 27 and a drain lead 28 fixed to the spacer 42 by Ag braze to electrically connect to the pellet 11 through wires 34, and a hermetically sealed cap 38. The stem 20 is made of Cu, the mount 15 is made of CuW with an Au plating film 17 formed on an Ni plating film 16, and the stem 20 is covered with an Ni plating film 22. Thus it is possible to reduce the manufacturing cost with ensuring a high heat radiating performance by the Cu stem and relax the stresses between the pellet and the stem by the CuW mount.</p> |
