| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device where disturbance phenomenon can be surely prevented. SOLUTION: A non-volatile semiconductor storage device is provided with a drain gate selection transistor Tr1 which supplies a first prescribed potential to one end of a current path and a control gate CG of a cell transistors Tr4 which are arranged in respective memory cells M10-M17 and operating responding to selection of a word line, a program region selection transistors Tr2 each supplying a second prescribed potential to a program region Pt, and a selection transistors Tr3 for source each supplying the first prescribed potential to the other end of a current path of the each cell transistor Tr4.</p> |
