| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize a latch type sense amplifier circuit with which current consumption is not increased also in a semiconductor memory other than DRAM. SOLUTION: A pair of bit lines S, S/ are set to the same potential by a pre-charge circuit 20 and set to a potential VPC at the time of reading out information. After that, a word line Wl is selectively activated, potentials of the bit lines S, S/ are complementarily raised or dropped based on the holding information of memory cells MCa, MCb. At the time, for example, when a potential of the bit line S/ becomes lower than the transhold value of a NMOS 12, is in a cut-off state, the bit line S is separated form an input/output terminal N1 of an amplifying section 11 until a potential of the bit line S is raised to a power source potential VH.</p> |
