| 摘要 |
<p>PROBLEM TO BE SOLVED: To narrow a gate electrode area without having to conduct highly accurate positioning in an exposure time, so as to improve the high frequency characteristic of an electron source by forming an electric field impression electrode only on a projection part side face around the circumference of a cold cathode by means of an exposure process through the use of screening effect of a mask arranged on the projection part. SOLUTION: A cold cathode 11 part is formed as a conical projection on a silicon substrate 12. A thermally oxidized silicon layer which serves as an insulating layer 13 is formed around the cold cathode 11. A gate electrode layer 14 serving as an electric field impression electrode, to which positive voltage is impressed for discharging electrons from the cold cathode 11, is additionally formed on the insulating layer 13, and the insulating layer 13 and the gate electrode layer 14 are formed so as to surround the circumference of the cold cathode 11 with its tip part exposed. In the gate electrode layer 14 formed around the aperture part of the cold cathode 11, the height of the upper part surface is set at substantially equal height of the tip part of the cold cathode 11. The gate electrode layers 14 in the respective cold cathodes 11 are connected to each other in grid form.</p> |
