发明名称 ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE AND ITS PRODUCTION
摘要 <p>PROBLEM TO BE SOLVED: To provide a process for efficiently producing the interlayer laminated films of high transmittance and high heat resistance of a TFT(thin-film transistor) substrate of a structure in which pixel electrodes and wiring overlap and an active matrix type liquid crystal display device having such TFT(thin-film transistor) substrate. SOLUTION: An org. film 100 is formed in at least part of the interlayer insulating films and is subjected to patterning by a wet etching method. A ground surface is patterned by a dry etching method using the org. film patterns 101 as a mask. A benzocyclobutene polymer or polysilazane compd. or a polymer of a cardo type compd. and a compd. having an epoxy group or an acrylic resin is used as the material, for the org. film 100.</p>
申请公布号 JPH11231347(A) 申请公布日期 1999.08.27
申请号 JP19980333035 申请日期 1998.11.24
申请人 NEC CORP 发明人 SAKAMOTO MICHIAKI;YOSHIKAWA SHIYUUKEN;NAKADA SHINICHI
分类号 G02F1/1333;G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G02F1/136;G02F1/133 主分类号 G02F1/1333
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