发明名称 |
ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE AND ITS PRODUCTION |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a process for efficiently producing the interlayer laminated films of high transmittance and high heat resistance of a TFT(thin-film transistor) substrate of a structure in which pixel electrodes and wiring overlap and an active matrix type liquid crystal display device having such TFT(thin-film transistor) substrate. SOLUTION: An org. film 100 is formed in at least part of the interlayer insulating films and is subjected to patterning by a wet etching method. A ground surface is patterned by a dry etching method using the org. film patterns 101 as a mask. A benzocyclobutene polymer or polysilazane compd. or a polymer of a cardo type compd. and a compd. having an epoxy group or an acrylic resin is used as the material, for the org. film 100.</p> |
申请公布号 |
JPH11231347(A) |
申请公布日期 |
1999.08.27 |
申请号 |
JP19980333035 |
申请日期 |
1998.11.24 |
申请人 |
NEC CORP |
发明人 |
SAKAMOTO MICHIAKI;YOSHIKAWA SHIYUUKEN;NAKADA SHINICHI |
分类号 |
G02F1/1333;G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G02F1/136;G02F1/133 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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