THIN FILM TRANSISTOR AND ACTIVE MATRIX TYPE DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a TFT(thin film transistor) element which can be manufactured at a high yield and high productivity. SOLUTION: A TFT contains a semiconductor layer formed on the surface of an insulating substrate 1 and having a channel forming area 2, a gate insulating film 6 formed on the semiconductor layer, and a gate electrode 8 formed on the channel forming area 2 with the gate insulating film 6 in between and the gate electrode 8 is made of tantalum. An active matrix display device uses this TFT.