| 摘要 |
<p>PROBLEM TO BE SOLVED: To repair a defective part between a Cs electrode and a pixel ITO without causing disadvantages in design by selectively removing the pixel ITO by irradiating a short-circuiting place or its periphery in a gate insulating film with a laser and eliminating the short circuit selectively. SOLUTION: A pinhole 11 is a defective part of the gate insulating film 8 and the Cs electrode 5 and pixel ITO 4 are in direct contact with each other, causing a short-circuit defect. The pinhole 11 is a part formed of the same material as the pixel ITO 4. Here, the periphery of the short-circuit part of the gate insulating film 8 is irradiated by a laser and then the pixel ITO 4 sublimes together with the insulating film 9 above it and is removed. Thus, when the short circuit is selectively eliminated and a YAG laser is used as the laser beam for repairing a pixel of a TFT array substrate, an irradiation energy typical value is about 1×10<4> J/cm<2> per shot and the pixel ITO 4 is removed by performing irradiation of this irradiation energy by several shots.</p> |
