| 摘要 |
<p>PROBLEM TO BE SOLVED: To cope with wafers of various kinds of materials by measuring the thermal wave value of a wafer irradiated with ions by the thermal wave method, and detecting the chucking force of an electrostatic chuck during the ion irradiation from a previously obtd. correlation with the measured value thereof. SOLUTION: The correlation of the wafer chucking force of an electrostatic chuck 100 under ion irradiation on a test wafer wf which is electrostatically chucked to a wafer support face of a holder 1 of the electrostatic chuck 100 to the thermal wave value of the test wafer wf, obtd. by the thermal wave method is obtd in advance. For executing the check and inspection work of the chucking force of electrostatic chuck 100, the thermal wave value of the wafer wf irradiated with the ions for ion implanting treatments is measured by the thermal wave method to detect the chucking force of the chuck 100 during the ion irradiation from this measured value and correlation obtained in advance.</p> |
